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Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1

RS Stock No.:: 349-157
Mfr. Part No.:: ISZ520N20NM6ATMA1
Brand:: Infineon

Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£7.57

(exc. VAT)

£9.085

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£1.514	£7.57
50 - 95	£1.438	£7.19
100 - 495	£1.332	£6.66
500 - 995	£1.226	£6.13
1000 +	£1.18	£5.90

*price indicative

RS Stock No.:: 349-157
Mfr. Part No.:: ISZ520N20NM6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-TSDSON-8FL
	Series	ISZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.9nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	88W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, J-STD-020, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-TSDSON-8FL
	Series ISZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.9nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 88W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS
	Automotive Standard No

Datasheet - ISZ520N20NM6ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.

Low conduction losses

Low switching losses

Stable operation with improved EMI

Less paralleling required

Better current sharing when paralleling

Environmentally friendly