MPN

Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1

RS Stock No.:: 348-902
Mfr. Part No.:: ISZ028N03LF2SATMA1
Brand:: Infineon

Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1

Bulk discount available

Subtotal (1 pack of 10 units)*

£8.94

(exc. VAT)

£10.73

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 4,950 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 - 90	£0.894	£8.94
100 - 240	£0.849	£8.49
250 - 490	£0.787	£7.87
500 - 990	£0.724	£7.24
1000 +	£0.697	£6.97

*price indicative

RS Stock No.:: 348-902
Mfr. Part No.:: ISZ028N03LF2SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	128A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PG-TSDSON-8
	Series	ISZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 128A
	Maximum Drain Source Voltage Vds 30V
	Package Type PG-TSDSON-8
	Series ISZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard No

Datasheet - ISZ028N03LF2SATMA1

COO (Country of Origin):: CN

The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Its features a best-in-class RDS(on) of 2.8 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency. Compared to the previous technology, its achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards