MPN

Infineon ISZ Type N-Channel MOSFET, 63 A, 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1

RS Stock No.:: 349-154
Mfr. Part No.:: ISZ113N10NM5LF2ATMA1
Brand:: Infineon

Infineon ISZ Type N-Channel MOSFET, 63 A, 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£8.36

(exc. VAT)

£10.03

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 5,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 45	£1.672	£8.36
50 - 95	£1.588	£7.94
100 - 495	£1.472	£7.36
500 - 995	£1.354	£6.77
1000 +	£1.304	£6.52

*price indicative

RS Stock No.:: 349-154
Mfr. Part No.:: ISZ113N10NM5LF2ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-TSDSON-8
	Series	ISZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	100W
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-TSDSON-8
	Series ISZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 100W
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard No

Datasheet - ISZ113N10NM5LF2ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 3.3x3.3 package, it is targeted for soft start and current limiting purpose in Power over Ethernet (PoE) application.

Wide safe operating area

Low RDS(on)

High max. pulse current

High max. continuous current

Available in small low profile package