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Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1

RS Stock No.:: 349-155
Mfr. Part No.:: ISZ143N13NM6ATMA1
Brand:: Infineon

Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£10.45

(exc. VAT)

£12.55

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 4,980 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 45	£2.09	£10.45
50 - 95	£1.986	£9.93
100 +	£1.84	£9.20

*price indicative

RS Stock No.:: 349-155
Mfr. Part No.:: ISZ143N13NM6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	54A
	Maximum Drain Source Voltage Vds	135V
	Package Type	PG-TSDSON-8FL
	Series	ISZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	95W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, J-STD-020, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 54A
	Maximum Drain Source Voltage Vds 135V
	Package Type PG-TSDSON-8FL
	Series ISZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 95W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS
	Automotive Standard No

Datasheet - ISZ143N13NM6ATMA1

COO (Country of Origin):: CN

The Infineon OptiMOS 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package. OptiMOS 6 135 V targets high power motor drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72 to 84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.

System cost reduction

Less paralleling required

Reduced VDS overshoot and switching losses

Higher power density designs