Name: Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 19.5 A, 60 V, 8-Pin PG-TSDSON-8 FL ISZ810P06LMATMA1
Brand: Infineon
SKU: 284-806
Price: 0.70 GBP
Availability: OutOfStock

The Infineon MOSFET is an advanced power transistor delivers exceptional performance and reliability, making it an ideal choice for demanding industrial applications. The Infineon OptiMOS Power Transistor series excels in energy efficiency with its low on resistance characteristics, ensuring minimal energy loss during operation. Its robust design is fully qualified according to JEDEC standards, providing peace of mind for engineers seeking durable components. Operating at 60V, it is tailored for high performance applications while maintaining low thermal resistance, allowing for effective heat management.

P channel configuration optimises current control
Logic level compatibility for easy interfacing
Avalanche tested for reliability under stress
Pb free lead plating meets environmental regulations
Halogen free construction supports cleaner production
Enhanced thermal characteristics for consistent operation
High continuous drain current for diverse applications

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	19.5 A
	Maximum Drain Source Voltage	60 V
	Series	OptiMOS Power Transistor
	Package Type	PG-TSDSON-8 FL
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 19.5 A
	Maximum Drain Source Voltage 60 V
	Series OptiMOS Power Transistor
	Package Type PG-TSDSON-8 FL
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Transistor Material SiC
	Number of Elements per Chip 1

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 19.5 A, 60 V, 8-Pin PG-TSDSON-8 FL ISZ810P06LMATMA1

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