Infineon IPT N-Channel MOSFET, 212 A, 135 V, 8-Pin PG-HSOF-8 IPTG029N13NM6ATMA1

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RS Stock No.:
349-137
Mfr. Part No.:
IPTG029N13NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

212 A

Maximum Drain Source Voltage

135 V

Series

IPT

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 135 V is an N-channel, normal level MOSFET designed to deliver high efficiency performance in power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses for greater energy efficiency. With an excellent gate charge x RDS(on) product (FOM), it ensures optimal switching performance. The MOSFET also offers very low reverse recovery charge (Qrr), improving switching efficiency. Additionally, it is 100% avalanche tested for reliability and can operate at 175°C, making it suitable for high temperature and demanding environments.

Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

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