Infineon IPT N-Channel MOSFET, 297 A, 135 V, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1

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RS Stock No.:
349-120
Mfr. Part No.:
IPT020N13NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

297 A

Maximum Drain Source Voltage

135 V

Package Type

PG-HSOF-8

Series

IPT

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for efficient power switching applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and improving overall performance. With an excellent gate charge x RDS(on) product (FOM), it ensures superior switching efficiency. The MOSFET also features very low reverse recovery charge (Qrr) for better efficiency during switching events.

Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

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