Infineon N-Channel MOSFET, 153 A, 650 V, 8-Pin HSOF IPT60R045CFD7XTMA1
- RS Stock No.:
- 273-2797
- Mfr. Part No.:
- IPT60R045CFD7XTMA1
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£6,280.00
(exc. VAT)
£7,540.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £3.14 | £6,280.00 |
*price indicative
- RS Stock No.:
- 273-2797
- Mfr. Part No.:
- IPT60R045CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 153 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | HSOF | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 153 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HSOF | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is a 600V CoolMOS CFD7 power transistor. The CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full bridge and LLC. Resulting from reduced gate charge, best in class reverse recovery charge and improved turn off behaviour CoolMOSCFD7 offers highest efficiency in resonant topologies.
RoHS compliant
Low gate charge
Ultra fast body diode
Increased power density solutions
Excellent hard commutation ruggedness
Low gate charge
Ultra fast body diode
Increased power density solutions
Excellent hard commutation ruggedness
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