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Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

RS Stock No.:: 349-130
Mfr. Part No.:: IPT067N20NM6ATMA1
Brand:: Infineon

Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

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£7.26

(exc. VAT)

£8.71

(inc. VAT)

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In Stock

1,960 unit(s) ready to ship

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Units	Per unit
1 - 9	£7.26
10 - 99	£6.53
100 - 499	£6.03
500 - 999	£5.59
1000 +	£5.01

*price indicative

RS Stock No.:: 349-130
Mfr. Part No.:: IPT067N20NM6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	137A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-HSOF-8
	Series	IPT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Typical Gate Charge Qg @ Vgs	71nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 137A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-HSOF-8
	Series IPT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Typical Gate Charge Qg @ Vgs 71nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
	Automotive Standard No

Datasheet - IPT067N20NM6ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020