Infineon IPT N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 IPTG017N12NM6ATMA1

The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring minimal conduction losses for improved performance. With an excellent gate charge x RDS(on) product (FOM), it enables superior switching characteristics. The MOSFET also has very low reverse recovery charge (Qrr), contributing to reduced switching losses. Its high avalanche energy rating ensures robustness under stress, and it operates reliably at a 175°C temperature, making it suitable for demanding and high temperature environments.

Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020