MPN

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

RS Stock No.:: 349-152
Mfr. Part No.:: ISG0616N10NM5HSCATMA1
Brand:: Infineon

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£8.88

(exc. VAT)

£10.66

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 3,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£4.44	£8.88
20 - 198	£3.995	£7.99
200 - 998	£3.685	£7.37
1000 - 1998	£3.42	£6.84
2000 +	£3.065	£6.13

*price indicative

RS Stock No.:: 349-152
Mfr. Part No.:: ISG0616N10NM5HSCATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	139A
	Maximum Drain Source Voltage Vds	100V
	Series	ISG
	Package Type	PG-WHITFN-10-1
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	167W
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 139A
	Maximum Drain Source Voltage Vds 100V
	Series ISG
	Package Type PG-WHITFN-10-1
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 167W
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - ISG0616N10NM5HSCATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses

Reduced voltage overshoot

High power capability

Superior thermal performance

Lowest loop inductance

Superior switching performance/EMI

Superior thermal management