Infineon ISG N-Channel MOSFET, 139 A, 100 V, 10-Pin PG-VITFN-10 ISG0616N10NM5HSCATMA1
- RS Stock No.:
- 349-152
- Mfr. Part No.:
- ISG0616N10NM5HSCATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£8.88
(exc. VAT)
£10.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,000 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.44 | £8.88 |
| 20 - 198 | £3.995 | £7.99 |
| 200 - 998 | £3.685 | £7.37 |
| 1000 - 1998 | £3.42 | £6.84 |
| 2000 + | £3.065 | £6.13 |
*price indicative
- RS Stock No.:
- 349-152
- Mfr. Part No.:
- ISG0616N10NM5HSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 139 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | ISG | |
| Package Type | PG-VITFN-10 | |
| Mounting Type | Surface Mount | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 139 A | ||
Maximum Drain Source Voltage 100 V | ||
Series ISG | ||
Package Type PG-VITFN-10 | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual side cooling capability boosts power throughput by an additional 25% with superior thermal management.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Superior switching performance/EMI
Superior thermal management
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Superior switching performance/EMI
Superior thermal management
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