Infineon ISG N-Channel MOSFET, 139 A, 100 V, 10-Pin PG-VITFN-10 ISG0616N10NM5HSCATMA1

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RS Stock No.:
349-152
Mfr. Part No.:
ISG0616N10NM5HSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

100 V

Series

ISG

Package Type

PG-VITFN-10

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon OptiMOS 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Superior switching performance/EMI
Superior thermal management

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