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Infineon OptiMOS-TM6 Type N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1

RS Stock No.:: 349-164
Mfr. Part No.:: IAUCN04S6N013TATMA1
Brand:: Infineon

Infineon OptiMOS-TM6 Type N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£7.26

(exc. VAT)

£8.71

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 2,000 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 45	£1.452	£7.26
50 - 95	£1.38	£6.90
100 - 495	£1.278	£6.39
500 - 995	£1.176	£5.88
1000 +	£1.132	£5.66

*price indicative

RS Stock No.:: 349-164
Mfr. Part No.:: IAUCN04S6N013TATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-LHDSO-10-1
	Series	OptiMOS-TM6
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	1.68mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	133W
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-LHDSO-10-1
	Series OptiMOS-TM6
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 1.68mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 133W
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUCN04S6N013TATMA1

COO (Country of Origin):: MY

The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.

MSL1 up to 260°C peak reflow

175°C operating temperature

RoHS compliant

Potential application