Infineon IPB N-Channel MOSFET, 39 A, 200 V, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- RS Stock No.:
- 349-401
- Mfr. Part No.:
- IPB339N20NM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 349-401
- Mfr. Part No.:
- IPB339N20NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 39 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | PG-TO263-3 | |
| Series | IPB | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type PG-TO263-3 | ||
Series IPB | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It offers very low on resistance (RDS(on)), ensuring minimal conduction losses. With an excellent gate charge x RDS(on) product (FOM), it delivers superior switching performance. This MOSFET also features very low reverse recovery charge (Qrr), enhancing overall efficiency.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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