Infineon ISG N-Channel MOSFET, 299 A, 40 V, 10-Pin PG-VITFN-10 ISG0613N04NM6HSCATMA1
- RS Stock No.:
- 349-394
- Mfr. Part No.:
- ISG0613N04NM6HSCATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£7.50
(exc. VAT)
£9.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,998 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.75 | £7.50 |
| 20 - 198 | £3.375 | £6.75 |
| 200 - 998 | £3.115 | £6.23 |
| 1000 - 1998 | £2.89 | £5.78 |
| 2000 + | £2.59 | £5.18 |
*price indicative
- RS Stock No.:
- 349-394
- Mfr. Part No.:
- ISG0613N04NM6HSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 299 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | ISG | |
| Package Type | PG-VITFN-10 | |
| Mounting Type | Surface Mount | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 299 A | ||
Maximum Drain Source Voltage 40 V | ||
Series ISG | ||
Package Type PG-VITFN-10 | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Superior thermal management
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Superior thermal management
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