Infineon ISG N-Channel MOSFET, 299 A, 40 V, 10-Pin PG-VITFN-10 ISG0613N04NM6HSCATMA1

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RS Stock No.:
349-394
Mfr. Part No.:
ISG0613N04NM6HSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

299 A

Maximum Drain Source Voltage

40 V

Series

ISG

Package Type

PG-VITFN-10

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
Superior thermal management

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