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Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0613N04NM6HSCATMA1

RS Stock No.:: 349-394
Mfr. Part No.:: ISG0613N04NM6HSCATMA1
Brand:: Infineon

Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0613N04NM6HSCATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£7.50

(exc. VAT)

£9.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 25 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£3.75	£7.50
20 - 198	£3.375	£6.75
200 - 998	£3.115	£6.23
1000 - 1998	£2.89	£5.78
2000 +	£2.59	£5.18

*price indicative

RS Stock No.:: 349-394
Mfr. Part No.:: ISG0613N04NM6HSCATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	299A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-WHITFN-10-1
	Series	ISG
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	0.88mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	167W
	Typical Gate Charge Qg @ Vgs	69nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 299A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-WHITFN-10-1
	Series ISG
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 0.88mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 167W
	Typical Gate Charge Qg @ Vgs 69nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard No

Datasheet - ISG0613N04NM6HSCATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses

Reduced voltage overshoot

High power capability

Superior thermal performance

Lowest loop inductance

Superior thermal management