Infineon CoolGaN N-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- RS Stock No.:
- 762-901
- Mfr. Part No.:
- IGLT65R110B2AUMA1
- Brand:
- Infineon
Get a bulk buy discount
Add 10 more to save 19%
View bulk pricing optionsSubtotal (1 unit)*
£5.67
(exc. VAT)
£6.80
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 1,769 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | £5.67 | - |
| 10 - 99 | £4.54 | 19% |
| 100 - 499 | £3.68 | 35% |
| 500 - 999 | £3.27 | 42% |
| 1000 + | £2.88 | 49% |
*price indicative
- RS Stock No.:
- 762-901
- Mfr. Part No.:
- IGLT65R110B2AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolGaN | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 55W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Height | 2.35mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series CoolGaN | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 55W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs -10V | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Height 2.35mm | ||
Standards/Approvals RoHS Compliant | ||
Width 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
Related links
- Infineon CoolGaN N-Channel MOSFET 600 V Enhancement, 8-Pin HSOF
- Infineon CoolGaN N-Channel MOSFET 600 V Enhancement, 8-Pin LSON
- Infineon CoolGaN N-Channel MOSFET 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3
- Infineon CoolGaN N-Channel MOSFET 600 V Enhancement, 8-Pin HSOF IGT60R190D1SATMA1
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R036M2HXTMA1
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R011M2HXTMA1
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R015M2HXTMA1
- Infineon CoolSiC N-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1