STMicroelectronics SCT0 Silicon MOSFET, 30 A, 1200 V, 3-Pin HiP247 SCT070W120G3AG
- RS Stock No.:
- 330-234
- Mfr. Part No.:
- SCT070W120G3AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£14.46
(exc. VAT)
£17.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 60 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £14.46 |
| 10 - 99 | £13.02 |
| 100 + | £12.00 |
*price indicative
- RS Stock No.:
- 330-234
- Mfr. Part No.:
- SCT070W120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | SCT0 | |
| Package Type | HiP247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCT0 | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability TJ equal to 200 °C
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability TJ equal to 200 °C
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