Infineon HEXFET P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 IRLML6401TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£1.70

(exc. VAT)

£2.05

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 755 unit(s) ready to ship
  • Plus 135 unit(s) ready to ship from another location
  • Plus 239,300 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45£0.34£1.70
50 - 245£0.29£1.45
250 - 495£0.222£1.11
500 - 1245£0.188£0.94
1250 +£0.154£0.77

*price indicative

Packaging Options:
RS Stock No.:
301-316
Mfr. Part No.:
IRLML6401TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

3.04mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

10 nC @ 5 V

Forward Diode Voltage

1.2V

Height

1.02mm

Minimum Operating Temperature

-55 °C

P-Channel Power MOSFET 12V to 20V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF


This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.

Features & Benefits


• Advanced processing for very low on-resistance
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs

Applications


• Battery and load management systems
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design

What is the impact of higher temperatures on performance?


Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.

How does the gate threshold voltage affect operation?


The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.

Is this product suited for fast-switching applications?


Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.

What precautions should be taken during installation?


It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links