Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2244TRPBF

RS Stock No.:: 760-4438
Mfr. Part No.:: IRLML2244TRPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2244TRPBF

Subtotal (1 pack of 5 units)*

£1.05

(exc. VAT)

£1.25

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

280 unit(s) ready to ship
Plus 153,000 unit(s) shipping from 02 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 +	£0.21	£1.05

*price indicative

RS Stock No.:: 760-4438
Mfr. Part No.:: IRLML2244TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Height	1.02mm
	Width	1.4 mm
	Distrelec Product Id	304-45-314
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Height 1.02mm
	Width 1.4 mm
	Distrelec Product Id 304-45-314
	Automotive Standard No

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 20V Maximum Drain Source Voltage - IRLML2244TRPBF

This MOSFET is designed for robust performance in a compact SOT-23 package. With a maximum continuous drain current of 4.3A and a drain-source voltage of 20V, it is suitable for various applications in the automation, electronics, and electrical industries. The device features enhancement mode operation and offers reliable performance in high-temperature environments, maintaining functionality in temperatures up to +150°C.

Features & Benefits

• Low RDS(on) of 54mΩ minimises switching losses

• Compatible with industry-standard pinout for easy integration

• High reliability with a maximum power dissipation of 1.3W

• Narrow temperature range for optimal operational efficiency

• Reduced gate charge enhances overall efficiency

Applications

• Ideal for low-voltage switching in electronics

• Suitable for power management in DC-DC converters

• Utilised in motor control systems for automation equipment

• Used in power supply circuits for enhanced energy management

What is the significance of the low RDS(on) in this component?

The low RDS(on) significantly reduces the power losses during operation, leading to improved efficiency and performance, especially in switching applications.

How does the operating temperature range benefit circuit design?

An operating temperature range of -55°C to +150°C allows for versatility in applications, enabling the MOSFET to function reliably in various operating environments, from extreme cold to high heat.

What makes this device suitable for surface mount technology?

The compact SOT-23 package design and compatible pinout facilitate easy integration into PCB layouts, enhancing manufacturing efficiency and allowing for mass production.

Can this MOSFET be used in automotive applications?

Yes, due to its high thermal resistance and reliability at elevated temperatures, it is suitable for automotive applications where heat dissipation is critical.