Infineon HEXFET P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

RS Stock No.:: 913-4705
Mfr. Part No.:: IRLML5203TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

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£225.00

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£270.00

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Units	Per unit	Per Reel*
3000 - 3000	£0.075	£225.00
6000 - 6000	£0.072	£216.00
9000 +	£0.067	£201.00

*price indicative

RS Stock No.:: 913-4705
Mfr. Part No.:: IRLML5203TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	3 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	165 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.25 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	9.5 nC @ 10 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	1.4mm
	Length	3.04mm
	Minimum Operating Temperature	-55 °C
	Height	1.02mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 3 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 165 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.25 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 9.5 nC @ 10 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 1.4mm
	Length 3.04mm
	Minimum Operating Temperature -55 °C
	Height 1.02mm

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML5203TRPBF

This MOSFET is a high-performance power device suitable for a range of applications in the electronics sector. Featuring a compact SOT-23 package, this P-channel device provides significant efficiency with a maximum continuous drain current of 3A and a drain-source voltage of 30V. With dimensions of 3.04mm in length, 1.4mm in width, and 1.02mm in height, it is well-suited for space-constrained designs.

Features & Benefits

• Capable of 30V drain-source voltage for versatile use
• Designed for surface mount for simplified PCB design
• Operates within a temperature range of -55°C to +150°C
• Utilises enhancement mode for reliable switching performance

Applications

• Utilised in battery management systems for optimal performance
• Used in portable electronics due to low-profile design
• Applied in load management solutions across various devices
• Suitable for advanced automation control systems

What is the significance of the low Rds(on) in this device?

The low Rds(on) ensures reduced power loss during operation, which enhances overall efficiency and maintains lower thermal levels in applications.

How does the power dissipation capability impact device performance?

The capability to dissipate up to 1.25W allows for effective heat management, ensuring the device operates reliably even under maximum load conditions without thermal failure.

What factors influence the selection of this MOSFET for a specific application?

Factors such as maximum continuous drain current, voltage ratings, and thermal characteristics should be considered to ensure compatibility with circuit requirements and performance expectations.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.