Infineon HEXFET Type P-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2246TRPBF
- RS Stock No.:
- 760-4432
- Mfr. Part No.:
- IRLML2246TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£1.14
(exc. VAT)
£1.37
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 585 left, ready to ship
- Final 113,440 unit(s) shipping from 01 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.228 | £1.14 |
| 50 - 245 | £0.216 | £1.08 |
| 250 - 495 | £0.206 | £1.03 |
| 500 - 1245 | £0.194 | £0.97 |
| 1250 + | £0.182 | £0.91 |
*price indicative
- RS Stock No.:
- 760-4432
- Mfr. Part No.:
- IRLML2246TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 236mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-315 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 236mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-315 | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET P-Channel MOSFET 20 V, 3-Pin SOT-23 IRLML2246TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML5103GTRPBF
- Infineon HEXFET P-Channel MOSFET 12 V, 3-Pin SOT-23 IRLML6401TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML5103TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML9301TRPBF
- Infineon HEXFET P-Channel MOSFET 20 V, 3-Pin SOT-23 IRLML2244TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML9303TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 3-Pin SOT-23 IRLML5203TRPBF