Infineon HEXFET P-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 IRLML2246TRPBF
- RS Stock No.:
- 165-6614
- Mfr. Part No.:
- IRLML2246TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£138.00
(exc. VAT)
£165.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 114,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.046 | £138.00 |
| 6000 - 12000 | £0.044 | £132.00 |
| 15000 + | £0.041 | £123.00 |
*price indicative
- RS Stock No.:
- 165-6614
- Mfr. Part No.:
- IRLML2246TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 236 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 2.9 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 236 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 2.9 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
- COO (Country of Origin):
- PH
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