Infineon FZ1200 3 P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4BPSA1
- RS Stock No.:
- 277-198
- Mfr. Part No.:
- FZ1200R45HL4BPSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 277-198
- Mfr. Part No.:
- FZ1200R45HL4BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.2 kA | |
| Maximum Drain Source Voltage | 4500 V | |
| Package Type | Tray | |
| Series | FZ1200 | |
| Mounting Type | Chassis Mount | |
| Channel Mode | Depletion | |
| Transistor Material | Si | |
| Number of Elements per Chip | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.2 kA | ||
Maximum Drain Source Voltage 4500 V | ||
Package Type Tray | ||
Series FZ1200 | ||
Mounting Type Chassis Mount | ||
Channel Mode Depletion | ||
Transistor Material Si | ||
Number of Elements per Chip 3 | ||
- COO (Country of Origin):
- HU
The Infineon IGBT Module is a IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate. The best solution for your industry applications.
High power density
For compact inverter designs
Standardized housing
For compact inverter designs
Standardized housing
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