Infineon XHP Dual SiC Dual N-Channel MOSFET, 1.8 kA, 1700 V Depletion Tray FF1800XTR17T2P5BPSA1
- RS Stock No.:
- 277-192
- Mfr. Part No.:
- FF1800XTR17T2P5BPSA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 277-192
- Mfr. Part No.:
- FF1800XTR17T2P5BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current | 1.8 kA | |
| Maximum Drain Source Voltage | 1700 V | |
| Series | XHP | |
| Package Type | Tray | |
| Mounting Type | Screw Mount | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current 1.8 kA | ||
Maximum Drain Source Voltage 1700 V | ||
Series XHP | ||
Package Type Tray | ||
Mounting Type Screw Mount | ||
Channel Mode Depletion | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- DE
The Infineon IGBT module is a XHP 2 1700 V, 1800 A dual IGBT module with .XT interconnection technology and TRENCHSTOP IGBT5 for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Less cooling effort for same output power
Enables higher system overload conditions
Sintering of chips for highest power cycling capabilities
Less cooling effort for same output power
Enables higher system overload conditions
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