Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
201-2810
Mfr. Part No.:
FF6MR12W2M1B11BOMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

1200 V

Series

CoolSiC

Package Type

AG-EASY2B

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.00825 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.

High current density
Low inductive design
Low switching losses
RoHS-compliant modules

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