Infineon FZ1200 3 P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4S7BPSA1

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
277-199
Mfr. Part No.:
FZ1200R45HL4S7BPSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.2 kA

Maximum Drain Source Voltage

4500 V

Package Type

Tray

Series

FZ1200

Mounting Type

Chassis Mount

Channel Mode

Depletion

Number of Elements per Chip

3

Transistor Material

Si

COO (Country of Origin):
HU
The Infineon IGBT Module is a IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate. The best solution for your industry applications.

High power density
For compact inverter designs
Standardized housing

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