Infineon FZ1200 Type P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4S7BPSA1

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
277-199
Mfr. Part No.:
FZ1200R45HL4S7BPSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.2kA

Maximum Drain Source Voltage Vds

4500V

Series

FZ1200

Package Type

Tray

Mount Type

Chassis

Channel Mode

Depletion

Forward Voltage Vf

2.95V

Maximum Power Dissipation Pd

2400kW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60749, IEC 60068, IEC 60747

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon IGBT Module is a IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate. The best solution for your industry applications.

High power density

For compact inverter designs

Standardized housing

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