Nexperia P-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 PMV160UP,215
- RS Stock No.:
- 816-6928
- Mfr. Part No.:
- PMV160UP,215
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
£13.60
(exc. VAT)
£16.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 300 unit(s) shipping from 13 October 2025
- Plus 250 unit(s) shipping from 13 October 2025
- Plus 1,050 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | £0.272 | £13.60 |
| 100 - 200 | £0.112 | £5.60 |
| 250 - 450 | £0.107 | £5.35 |
| 500 - 950 | £0.101 | £5.05 |
| 1000 + | £0.096 | £4.80 |
*price indicative
- RS Stock No.:
- 816-6928
- Mfr. Part No.:
- PMV160UP,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.95V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 2.17 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +8 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 3.3 nC @ 4.5 V | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.95V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 2.17 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +8 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 3.3 nC @ 4.5 V | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.4mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors