Nexperia P-Channel MOSFET, 230 mA, 30 V, 3-Pin SOT-23 NX3008PBK,215
- RS Stock No.:
- 816-0579
- Mfr. Part No.:
- NX3008PBK,215
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 150 units)*
£7.05
(exc. VAT)
£8.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,450 unit(s) ready to ship
- Plus 18,150 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 150 | £0.047 | £7.05 |
| 300 - 600 | £0.041 | £6.15 |
| 750 - 1350 | £0.03 | £4.50 |
| 1500 - 2850 | £0.024 | £3.60 |
| 3000 + | £0.024 | £3.60 |
*price indicative
- RS Stock No.:
- 816-0579
- Mfr. Part No.:
- NX3008PBK,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 230 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.14 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 0.55 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 230 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.14 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 0.55 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors