onsemi NDS352AP P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP
- RS Stock No.:
- 178-7591
- Mfr. Part No.:
- NDS352AP
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£366.00
(exc. VAT)
£438.00
(inc. VAT)
FREE delivery for orders over £50.00
- 3,000 unit(s) ready to ship
| Units | Per unit | Per Reel* | 
|---|---|---|
| 3000 + | £0.122 | £366.00 | 
*price indicative
- RS Stock No.:
- 178-7591
- Mfr. Part No.:
- NDS352AP
- Brand:
- onsemi
| Select all | Attribute | Value | 
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 900 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Series | NDS352AP | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 20V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2.92mm | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.94mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
| Brand onsemi | ||
| Channel Type P | ||
| Maximum Continuous Drain Current 900 mA | ||
| Maximum Drain Source Voltage 30 V | ||
| Series NDS352AP | ||
| Package Type SOT-23 | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 0.5 Ω | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 20V | ||
| Minimum Gate Threshold Voltage 0.8V | ||
| Maximum Power Dissipation 500 mW | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Typical Gate Charge @ Vgs 2 nC @ 4.5 V | ||
| Maximum Operating Temperature +150 °C | ||
| Transistor Material Si | ||
| Length 2.92mm | ||
| Width 1.4mm | ||
| Number of Elements per Chip 1 | ||
| Height 0.94mm | ||
| Minimum Operating Temperature -55 °C | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
Features and Benefits:
 High-Density cell design
 High saturation current
 Superior switching
 Great rugged and reliable performance
 DMOS technology
Applications:
 DC/DC converter
 Battery protection
 Power management control
 DC motor control
Industry standard outline SOT-23 surface mount package
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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