onsemi NDS352AP P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

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Subtotal (1 reel of 3000 units)*

£366.00

(exc. VAT)

£438.00

(inc. VAT)

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RS Stock No.:
178-7591
Mfr. Part No.:
NDS352AP
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Series

NDS352AP

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.92mm

Width

1.4mm

Number of Elements per Chip

1

Height

0.94mm

Minimum Operating Temperature

-55 °C

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

The ON Semiconductor NDS352AP is P channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance.

Exceptional on resistance and maximum DC current capability
Industry standard outline SOT-23 surface mount package


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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