Specifications

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Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	900 mA
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	300 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.8V
	Maximum Power Dissipation	500 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	2.92mm
	Transistor Material	Si
	Width	1.4mm
	Typical Gate Charge @ Vgs	2 nC @ 4.5 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Height	0.94mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 900 mA
	Maximum Drain Source Voltage 30 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 300 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.8V
	Maximum Power Dissipation 500 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 2.92mm
	Transistor Material Si
	Width 1.4mm
	Typical Gate Charge @ Vgs 2 nC @ 4.5 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Height 0.94mm
	Minimum Operating Temperature -55 °C

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

The ON Semiconductor NDS352AP is P channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance.

Exceptional on resistance and maximum DC current capability
Industry standard outline SOT-23 surface mount package

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Units	Per unit	Per Pack*
10 - 90	£0.293	£2.93
100 - 240	£0.253	£2.53
250 - 490	£0.219	£2.19
500 - 990	£0.192	£1.92
1000 +	£0.175	£1.75

onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

FREE delivery for orders over £50.00

Enhancement Mode P-Channel MOSFET, ON Semiconductor

Features and Benefits:

Applications:

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