MPN

Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

RS Stock No.:: 302-038
Mfr. Part No.:: IRLML5103TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF

Subtotal (1 pack of 5 units)*

£1.39

(exc. VAT)

£1.67

(inc. VAT)

FREE delivery for orders over £50.00

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10 left, ready to ship from another location

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Units	Per unit	Per Pack*
5 +	£0.278	£1.39

*price indicative

RS Stock No.:: 302-038
Mfr. Part No.:: IRLML5103TRPBF
Brand:: Infineon

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 760mA Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML5103TRPBF

This MOSFET is a versatile electronic component suited for efficient power switching applications. It is designed for use in automation, electronics, and mechanical industries, offering a compact solution for high-performance tasks. Its enhancement channel mode improves operational efficiency, making it a popular choice in applications that require dependable MOSFET functionality.

Features & Benefits

• Compact SOT-23 package appropriate for space-constrained designs
• High continuous drain current of 760 mA for enhanced durability
• Maximum drain-source voltage of 30 V for a range of applications
• Low Rds(on) of 600mΩ minimises power loss and boosts efficiency
• Typical gate charge of 3.4nC lowers switching losses

Applications

• Utilised in power management and conversion solutions
• Suitable for industrial automation setups
• Ideal for switch-mode power supply designs
• Supports battery management systems in electronic devices
• Employed in motor control that require efficient power switching

How does the MOSFET perform in high-temperature environments?

It functions effectively at temperatures up to +150°C, ensuring consistent performance under challenging conditions.

What is the significance of the low Rds(on) value?

A low Rds(on) of 600mΩ reduces energy loss during operation, enhancing overall system efficiency.

Can this MOSFET be used in compact designs?

Yes, the SOT-23 package enables integration into compact applications without compromising performance.

What is the maximum gate-source voltage this device can handle?

It can tolerate a maximum gate-source voltage of ±20V, ensuring safe operation within specified limits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	760 mA
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-23
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	600 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	540 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Length	3.04mm
	Typical Gate Charge @ Vgs	3.4 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	1.4mm
	Height	1.02mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 760 mA
	Maximum Drain Source Voltage 30 V
	Package Type SOT-23
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 600 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 540 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Length 3.04mm
	Typical Gate Charge @ Vgs 3.4 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 1.4mm
	Height 1.02mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

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