STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG

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Subtotal (1 reel of 1000 units)*

£19,365.00

(exc. VAT)

£23,238.00

(inc. VAT)

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RS Stock No.:
215-225
Mfr. Part No.:
SCT018H65G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

H2PAK-7

Mounting Type

Through Hole

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

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