STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG

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Subtotal (1 reel of 1000 units)*

£38,822.00

(exc. VAT)

£46,586.00

(inc. VAT)

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RS Stock No.:
215-219
Mfr. Part No.:
SCT012H90G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

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