STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin H2PAK-7 SCT070H120G3-7

View all MOSFETs

Subtotal (1 reel of 1000 units)*

£8,878.00

(exc. VAT)

£10,654.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 1,000 unit(s) shipping from 17 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£8.878£8,878.00

*price indicative

RS Stock No.:
214-960
Mfr. Part No.:
SCT070H120G3-7
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

Related links