IXYS HiperFET, Polar Type N-Channel MOSFET, 72 A, 600 V Enhancement, 4-Pin SOT-227 IXFN82N60P

Bulk discount available

Subtotal (1 unit)*

£37.64

(exc. VAT)

£45.17

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 83 unit(s) ready to ship
  • Plus 2 unit(s) ready to ship from another location
  • Plus 86 unit(s) shipping from 17 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£37.64
2 - 4£36.51
5 +£35.76

*price indicative

RS Stock No.:
194-130
Mfr. Part No.:
IXFN82N60P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.04kW

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

240nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.2mm

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links