IXYS HiperFET, Polar N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXFN82N60P

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£37.64

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£45.17

(inc. VAT)

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  • 20 unit(s) ready to ship
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1 - 1£37.64
2 - 4£36.51
5 +£35.76

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RS Stock No.:
194-130
Mfr. Part No.:
IXFN82N60P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

600 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

38.2mm

Number of Elements per Chip

1

Transistor Material

Si

Width

25.07mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

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