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    P Channel Mosfets

    2873 Products showing for P Channel Mosfets

    onsemi
    P
    30 A
    60 V
    26 mΩ
    TO-220F
    QFET
    Through Hole
    3
    -25 V, +25 V
    Enhancement
    -
    2V
    62 W
    -
    Single
    10.16mm
    +175 °C
    1
    Si
    84 nC @ 10 V
    4.7mm
    DiodesZetex
    P
    1.1 A
    30 V
    550 mΩ
    SOT-23
    -
    Surface Mount
    3
    -20 V, +20 V
    Enhancement
    -
    1V
    806 mW
    -
    Single
    3.05mm
    +150 °C
    1
    Si
    4.8 nC @ 10 V
    1.4mm
    Vishay
    P
    2 A
    200 V
    3 Ω
    TO-220FP
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    27 W
    -
    Single
    -
    +150 °C
    1
    Si
    13 nC @ 10 V
    -
    Vishay
    P
    21 A
    100 V
    200 mΩ
    TO-247AC
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    180 W
    -
    Single
    15.87mm
    +175 °C
    1
    Si
    61 nC @ 10 V
    5.31mm
    onsemi
    P
    13 A
    30 V
    9 mΩ
    SOIC
    PowerTrench
    Surface Mount
    8
    -25 V, +25 V
    Enhancement
    -
    1V
    2.5 W
    -
    Single
    5mm
    +150 °C
    1
    Si
    68 nC @ 10 V
    4mm
    Microchip
    P
    175 mA
    40 V
    10 Ω
    TO-92
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    2V
    -
    740 mW
    -
    Single
    5.08mm
    +150 °C
    1
    Si
    -
    4.06mm
    onsemi
    P
    1.33 A
    500 V
    4.9 Ω
    DPAK (TO-252)
    QFET
    Surface Mount
    3
    -30 V, +30 V
    Enhancement
    -
    3V
    50 W
    -
    Single
    6.73mm
    +150 °C
    1
    Si
    18 nC @ 10 V
    6.22mm
    Infineon
    P
    74 A
    55 V
    20 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    180 nC @ 10 V
    4.69mm
    Infineon
    P
    23 A
    100 V
    117 mΩ
    TO-220AB
    HEXFET
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    4V
    2V
    140 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    97 nC @ 10 V
    4.69mm
    DiodesZetex
    P
    280 mA
    60 V
    5 Ω
    E-Line
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.5V
    -
    700 mW
    -
    Single
    4.77mm
    +150 °C
    1
    Si
    -
    2.41mm
    Vishay
    P
    6.1 A
    50 V
    280 mΩ
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    40 W
    -
    Single
    10.51mm
    +150 °C
    1
    Si
    17 nC @ 10 V
    4.65mm
    Vishay
    P
    4 A
    100 V
    1.2 Ω
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    43 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    8.7 nC @ 10 V
    4.7mm
    Vishay
    P
    226 A
    40 V
    0.004 Ω
    PowerPAK 8 x 8L
    P-Channel 40 V
    Surface Mount
    4
    -
    -
    2.5V
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Vishay
    P
    18 A
    60 V
    140 mΩ
    TO-220AB
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    -
    2V
    88 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    34 nC @ 10 V
    4.7mm
    Microchip
    P
    643 mA
    60 V
    1.5 Ω
    TO-92
    VP2206
    Surface Mount
    3
    -
    Enhancement
    3.5V
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Vishay
    P
    3.1 A
    60 V
    150 mΩ
    SOIC
    -
    Surface Mount
    8
    -20 V, +20 V
    Enhancement
    -
    1V
    2.4 W
    -
    Isolated
    5mm
    +175 °C
    2
    Si
    14.5 nC @ 10 V
    4mm
    DiodesZetex
    N, P
    550 mA, 800 mA
    30 V
    0.7 Ω
    SOT-363
    DMC3401
    Surface Mount
    6
    -
    Enhancement
    1.6V
    -
    -
    -
    -
    -
    -
    2
    Si
    -
    -
    Vishay
    P
    19 A
    55 V
    -
    DPAK (TO-252)
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    DiodesZetex
    P
    140 mA
    100 V
    20 Ω
    TO-92
    -
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    3.5V
    -
    625 mW
    -
    Single
    4.77mm
    +150 °C
    1
    Si
    -
    2.41mm
    onsemi
    P
    17 A
    60 V
    120 mΩ
    TO-220AB
    QFET
    Through Hole
    3
    -25 V, +25 V
    Enhancement
    -
    2V
    79 W
    -
    Single
    10.1mm
    +175 °C
    1
    Si
    21 nC @ 10 V
    4.7mm
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