onsemi PowerTrench P-Channel MOSFET, 7.9 A, 100 V, 8-Pin PQFN8 FDMS86163P
- RS Stock No.:
- 864-8442
- Mfr. Part No.:
- FDMS86163P
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£9.85
(exc. VAT)
£11.80
(inc. VAT)
FREE delivery for orders over £50.00
- 70 unit(s) ready to ship
- Plus 2,920 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.97 | £9.85 |
50 - 95 | £1.698 | £8.49 |
100 + | £1.472 | £7.36 |
*price indicative
- RS Stock No.:
- 864-8442
- Mfr. Part No.:
- FDMS86163P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 7.9 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | PQFN8 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 36 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 104 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
Length | 5mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 5.85mm | |
Height | 1.05mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 7.9 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5.85mm | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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