P-Channel MOSFET, 7.9 A, 100 V, 8-Pin PQFN8 onsemi FDMS86163P
- RS Stock No.:
- 864-8442
- Mfr. Part No.:
- FDMS86163P
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
£11.95
(exc. VAT)
£14.35
(inc. VAT)
70 In stock - FREE next working day delivery available*
30 available from Europe for delivery within 2 working day(s).
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
|---|---|---|
| 5 - 45 | £2.39 | £11.95 |
| 50 - 95 | £2.06 | £10.30 |
| 100 + | £1.786 | £8.93 |
**price indicative
- RS Stock No.:
- 864-8442
- Mfr. Part No.:
- FDMS86163P
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 7.9 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PQFN8 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 36 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
| Width | 5.85mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 7.9 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Width 5.85mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
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