onsemi PowerTrench Type P-Channel MOSFET, 7.9 A, 100 V Enhancement, 8-Pin WDFN
- RS Stock No.:
- 124-1441
- Mfr. Part No.:
- FDMS86163P
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 124-1441
- Mfr. Part No.:
- FDMS86163P
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | WDFN | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.05mm | |
| Length | 5mm | |
| Width | 5.85 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type WDFN | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 1.05mm | ||
Length 5mm | ||
Width 5.85 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench P-Channel MOSFET 100 V, 8-Pin PQFN8 FDMS86163P
- onsemi PowerTrench P-Channel MOSFET 150 V, 8-Pin PQFN8 FDMS86263P
- onsemi PowerTrench P-Channel MOSFET 30 V, 3-Pin SOT-23 FDN352AP
- onsemi PowerTrench P-Channel MOSFET 30 V, 8-Pin SOIC FDS9435A
- onsemi PowerTrench P-Channel MOSFET 40 V, 3-Pin DPAK FDD4685
- onsemi PowerTrench P-Channel MOSFET 12 V, 6-Pin SOT-23 FDC606P
- onsemi PowerTrench P-Channel MOSFET 30 V, 8-Pin SOIC SI4435DY
- onsemi PowerTrench P-Channel MOSFET 30 V, 8-Pin SOIC FDS6679AZ