Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£1,005.00

(exc. VAT)

£1,205.00

(inc. VAT)

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2500 +£0.402£1,005.00

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RS Stock No.:
919-4198
Mfr. Part No.:
SI4948BEY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Length

5mm

Number of Elements per Chip

2

Transistor Material

Si

Width

4mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
TW

Dual P-Channel MOSFET, Vishay Semiconductor



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