Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3
- RS Stock No.:
- 188-4989
- Distrelec Article No.:
- 304-38-848
- Mfr. Part No.:
- SIHG21N80AE-GE3
- Brand:
- Vishay
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£8.44
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.22 | £8.44 |
| 20 - 48 | £3.80 | £7.60 |
| 50 - 98 | £3.595 | £7.19 |
| 100 - 198 | £3.38 | £6.76 |
| 200 + | £3.17 | £6.34 |
*price indicative
- RS Stock No.:
- 188-4989
- Distrelec Article No.:
- 304-38-848
- Mfr. Part No.:
- SIHG21N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 32W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.31mm | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 32W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.31mm | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Drain Current - SIHG21N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial environments. It operates across a wide temperature range, supports substantial continuous current, and is supplied in a through-hole TO-247AC package suitable for applications requiring robust mounting and straightforward thermal interfacing.
Features and Benefits:
• 800V blocking capability enabling high-voltage system design • 17.4 A continuous drain current for substantial load handling • 235 mΩ Rds(on) to reduce conduction losses under load • 48 nC typical gate charge for predictable switching performance • 179W power dissipation capacity for demanding power stages • Rated to 150 °C for elevated-temperature operation
Applications
• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for renewable-energy inverter and PV optimiser designs • Can be used for traction and utility power electronics • Suitable for hard-switched and soft-switched semiconductor stages
What mounting considerations apply for thermal management?
The through-hole TO-247AC format enables direct bolting to heatsinks and effective use of insulating pads or thermal compound to transfer dissipated power to external cooling.
How does the gate-source voltage rating affect gate-drive design?
With a maximum gate-source allowance of 30 V, gate drivers should be selected to operate within this window and provide sufficient drive to achieve the specified gate charge without exceeding the voltage limit.
What environmental extremes can it tolerate during operation?
The device is specified to function down to -55 °C and up to 150 °C, permitting use in installations with wide ambient and junction temperature excursions.
Which electrical parameter dictates switching-energy considerations?
The typical gate charge of 48 nC combined with the device’s on-resistance and voltage rating primarily determines energy losses during turn-on and turn-off events.
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