MPN

Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247

RS Stock No.:: 222-4830
Mfr. Part No.:: IDM08G120C5XTMA1
Brand:: Infineon

Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247

Subtotal (1 reel of 2500 units)*

£2,380.00

(exc. VAT)

£2,855.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 04 August 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	£0.952	£2,380.00

*price indicative

RS Stock No.:: 222-4830
Mfr. Part No.:: IDM08G120C5XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Mount Type	Surface
	Product Type	Diode
	Package Type	TO-247
	Maximum Continuous Forward Current If	8A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Diode Configuration	Silicon Carbide Schottky Diode
	Series	5th Generation thinQ!TM
	Rectifier Type	SiC Schottky
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	70A
	Maximum Forward Voltage Vf	2.85V
	Maximum Operating Temperature	175°C
	Length	6.65mm
	Height	10.4mm
	Width	2.35 mm
	Standards/Approvals	JEDEC1)
	Automotive Standard	No

	Select all
	Brand Infineon
	Mount Type Surface
	Product Type Diode
	Package Type TO-247
	Maximum Continuous Forward Current If 8A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Diode Configuration Silicon Carbide Schottky Diode
	Series 5th Generation thinQ!TM
	Rectifier Type SiC Schottky
	Pin Count 3
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 70A
	Maximum Forward Voltage Vf 2.85V
	Maximum Operating Temperature 175°C
	Length 6.65mm
	Height 10.4mm
	Width 2.35 mm
	Standards/Approvals JEDEC1)
	Automotive Standard No

Datasheet - IDM08G120C5XTMA1

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)

No reverse recovery charge

Mild positive temperature dependency of VF

Best-in-class surge current capability

Excellent thermal performance