Infineon 1200V 8A, SiC Schottky Diode, 3-Pin TO-247 IDM08G120C5XTMA1

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Subtotal (1 reel of 2500 units)*

£2,700.00

(exc. VAT)

£3,250.00

(inc. VAT)

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  • 999,997,500 unit(s) shipping from 09 March 2026
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Units
Per unit
Per Reel*
2500 +£1.08£2,700.00

*price indicative

RS Stock No.:
222-4830
Mfr. Part No.:
IDM08G120C5XTMA1
Brand:
Infineon
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Brand

Infineon

Mounting Type

SMD

Package Type

TO-247

Maximum Continuous Forward Current

8A

Peak Reverse Repetitive Voltage

1200V

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

3

Number of Elements per Chip

1

Diode Technology

SiC Schottky

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance

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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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