Infineon 1200V 2A, SiC Schottky Diode, 2-Pin DPAK IDM02G120C5XTMA1
- RS Stock No.:
- 222-4826
- Mfr. Part No.:
- IDM02G120C5XTMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,752.50
(exc. VAT)
£2,102.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.701 | £1,752.50 |
*price indicative
- RS Stock No.:
- 222-4826
- Mfr. Part No.:
- IDM02G120C5XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Mounting Type | SMD | |
Package Type | DPAK (TO-252-2) | |
Maximum Continuous Forward Current | 2A | |
Peak Reverse Repetitive Voltage | 1200V | |
Rectifier Type | Schottky Diode | |
Diode Type | SiC Schottky | |
Pin Count | 2 | |
Number of Elements per Chip | 1 | |
Diode Technology | SiC Schottky | |
Select all | ||
---|---|---|
Brand Infineon | ||
Mounting Type SMD | ||
Package Type DPAK (TO-252-2) | ||
Maximum Continuous Forward Current 2A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 2 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
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