Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1

RS Stock No.:: 222-4827
Mfr. Part No.:: IDM02G120C5XTMA1
Brand:: Infineon

Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1

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Subtotal (1 pack of 5 units)*

£8.80

(exc. VAT)

£10.55

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,305 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 20	£1.76	£8.80
25 - 45	£1.478	£7.39
50 - 120	£1.388	£6.94
125 - 245	£1.284	£6.42
250 +	£1.196	£5.98

*price indicative

RS Stock No.:: 222-4827
Mfr. Part No.:: IDM02G120C5XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-252
	Maximum Continuous Forward Current If	2A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Diode Configuration	Silicon Carbide Schottky Diode
	Series	5th Generation thinQ!TM
	Rectifier Type	SiC Schottky
	Pin Count	2
	Peak Non-Repetitive Forward Surge Current Ifsm	37A
	Maximum Forward Voltage Vf	2.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	J-STD20 and JESD22
	Height	10.4mm
	Length	6.65mm
	Width	2.35 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Diode
	Mount Type Surface
	Package Type TO-252
	Maximum Continuous Forward Current If 2A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Diode Configuration Silicon Carbide Schottky Diode
	Series 5th Generation thinQ!TM
	Rectifier Type SiC Schottky
	Pin Count 2
	Peak Non-Repetitive Forward Surge Current Ifsm 37A
	Maximum Forward Voltage Vf 2.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals J-STD20 and JESD22
	Height 10.4mm
	Length 6.65mm
	Width 2.35 mm
	Automotive Standard No

Datasheet - IDM02G120C5XTMA1

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Revolutionary semiconductor material - Silicon Carbide

No reverse recovery current / No forward recovery

Temperature independent switching behavior

Low forward voltage even at high operating temperature

Tight forward voltage distribution

Excellent thermal performance

Extended surge current capability

Specified dv/dt ruggedness

Qualified according to JEDEC1) for target applications

Pb-free lead plating; RoHS compliant