Infineon 1200V 10A, SiC Schottky Diode, 3-Pin TO-247 IDW10G120C5BFKSA1

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Subtotal (1 tube of 30 units)*

£56.88

(exc. VAT)

£68.25

(inc. VAT)

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30 +£1.896£56.88

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RS Stock No.:
222-4833
Mfr. Part No.:
IDW10G120C5BFKSA1
Brand:
Infineon
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Brand

Infineon

Mounting Type

SMD

Package Type

TO-247

Maximum Continuous Forward Current

10A

Peak Reverse Repetitive Voltage

1200V

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

3

Number of Elements per Chip

1

Diode Technology

SiC Schottky

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance

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Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
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