Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247
- RS Stock No.:
- 216-8395
- Mfr. Part No.:
- IDW40G120C5BFKSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 216-8395
- Mfr. Part No.:
- IDW40G120C5BFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | 5th Generation CoolSiCTM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 290A | |
| Peak Reverse Current Ir | 1700μA | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1) | |
| Length | 16.13mm | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series 5th Generation CoolSiCTM | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 290A | ||
Peak Reverse Current Ir 1700μA | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1) | ||
Length 16.13mm | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 5 offers a new leading edge technology for the schottky barrier diode with current rating of 40 A. This latest generation is suitable for use in motor control and drives, solar system and UPS system.
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
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