Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-220AB IRF3710PBF

Bulk discount available

Subtotal (1 tube of 50 units)*

£49.05

(exc. VAT)

£58.85

(inc. VAT)

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In Stock
  • 200 unit(s) ready to ship
  • Plus 300 unit(s) shipping from 08 October 2025
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Units
Per unit
Per Tube*
50 - 50£0.981£49.05
100 - 200£0.785£39.25
250 - 450£0.736£36.80
500 - 950£0.687£34.35
1000 +£0.638£31.90

*price indicative

RS Stock No.:
919-4775
Mfr. Part No.:
IRF3710PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Typical Gate Charge @ Vgs

130 nC @ 10 V

Length

10.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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