Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin D2PAK IRF3710STRLPBF

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£9.98

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£11.98

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10 - 40£0.998£9.98
50 - 90£0.948£9.48
100 - 240£0.908£9.08
250 - 490£0.868£8.68
500 +£0.808£8.08

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Packaging Options:
RS Stock No.:
218-3096
Mfr. Part No.:
IRF3710STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.023 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free

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