Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF

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£42.425

(exc. VAT)

£50.90

(inc. VAT)

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RS Stock No.:
919-4918
Mfr. Part No.:
IRFP3710PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

15.9mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

190 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

20.3mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP3710PBF


This MOSFET is designed for efficient power management in a variety of electronic applications. It features an N-channel configuration and handles high continuous drain current, ensuring effective performance even at elevated temperatures and exhibiting low on-resistance, making it suitable for industrial environments.

Features & Benefits


• High continuous drain current capability supports strong performance
• Maximum drain-source voltage of 100V increases versatility
• Low RDS(on) of 25mΩ minimises energy loss during operation
• High power dissipation capacity of 200W enables effective energy management
• Enhancement mode transistor allows for control over switching operations
• TO-247AC package facilitates easy integration in through-hole applications

Applications


• Ideal for power supply circuits
• Commonly found in motor control systems
• Suitable for automotive power management solutions
• Utilised in battery management systems

What is the maximum temperature for this device to operate?


The maximum operating temperature reaches up to +175°C, allowing efficient function in high-temperature environments.

How does this device handle high currents?


It supports a continuous drain current of 57A, enabling it to power high-demand applications without failure.

Can it be used in a through-hole design?


Yes, the TO-247AC package allows for through-hole mounting, simplifying integration into various circuit boards.

What kind of load can this MOSFET switch?


This device can manage significant loads due to its high power dissipation of 200W, suitable for heavy-duty applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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