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Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF

RS Stock No.:: 919-4918
Mfr. Part No.:: IRFP3710PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF

Subtotal (1 tube of 25 units)*

£40.50

(exc. VAT)

£48.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,975 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
25 +	£1.62	£40.50

*price indicative

RS Stock No.:: 919-4918
Mfr. Part No.:: IRFP3710PBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP3710PBF

This MOSFET is designed for efficient power management in a variety of electronic applications. It features an N-channel configuration and handles high continuous drain current, ensuring effective performance even at elevated temperatures and exhibiting low on-resistance, making it suitable for industrial environments.

Features & Benefits

• High continuous drain current capability supports strong performance
• Maximum drain-source voltage of 100V increases versatility
• Low RDS(on) of 25mΩ minimises energy loss during operation
• High power dissipation capacity of 200W enables effective energy management
• Enhancement mode transistor allows for control over switching operations
• TO-247AC package facilitates easy integration in through-hole applications

Applications

• Ideal for power supply circuits
• Commonly found in motor control systems
• Suitable for automotive power management solutions
• Utilised in battery management systems

What is the maximum temperature for this device to operate?

The maximum operating temperature reaches up to +175°C, allowing efficient function in high-temperature environments.

How does this device handle high currents?

It supports a continuous drain current of 57A, enabling it to power high-demand applications without failure.

Can it be used in a through-hole design?

Yes, the TO-247AC package allows for through-hole mounting, simplifying integration into various circuit boards.

What kind of load can this MOSFET switch?

This device can manage significant loads due to its high power dissipation of 200W, suitable for heavy-duty applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	57 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-247AC
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	25 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	15.9mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	190 nC @ 10 V
	Width	5.3mm
	Height	20.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 57 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-247AC
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 25 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 15.9mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 190 nC @ 10 V
	Width 5.3mm
	Height 20.3mm
	Minimum Operating Temperature -55 °C

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