Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-247AC IRFP3710PBF
- RS Stock No.:
- 919-4918
- Mfr. Part No.:
- IRFP3710PBF
- Brand:
- Infineon
Subtotal (1 tube of 25 units)*
£42.425
(exc. VAT)
£50.90
(inc. VAT)
FREE delivery for orders over £50.00
- 1,625 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
25 + | £1.697 | £42.43 |
*price indicative
- RS Stock No.:
- 919-4918
- Mfr. Part No.:
- IRFP3710PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 57 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 25 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 15.9mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 190 nC @ 10 V | |
Width | 5.3mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Height | 20.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 57 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 190 nC @ 10 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP3710PBF
Features & Benefits
• Maximum drain-source voltage of 100V increases versatility
• Low RDS(on) of 25mΩ minimises energy loss during operation
• High power dissipation capacity of 200W enables effective energy management
• Enhancement mode transistor allows for control over switching operations
• TO-247AC package facilitates easy integration in through-hole applications
Applications
• Commonly found in motor control systems
• Suitable for automotive power management solutions
• Utilised in battery management systems
What is the maximum temperature for this device to operate?
How does this device handle high currents?
Can it be used in a through-hole design?
What kind of load can this MOSFET switch?
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