Infineon HEXFET N-Channel MOSFET, 57 A, 100 V, 3-Pin D2PAK IRF3710STRLPBF

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Subtotal (1 reel of 800 units)*

£513.60

(exc. VAT)

£616.00

(inc. VAT)

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Per Reel*
800 - 800£0.642£513.60
1600 +£0.61£488.00

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RS Stock No.:
218-3095
Mfr. Part No.:
IRF3710STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.023 Ω

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free

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