Infineon HEXFET N-Channel MOSFET, 57 A, 100 V Enhancement SO-8 IRF6644TRPBF
- RS Stock No.:
- 257-9296
- Mfr. Part No.:
- IRF6644TRPBF
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
£5.36
(exc. VAT)
£6.44
(inc. VAT)
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In Stock
- Plus 4,470 unit(s) shipping from 05 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.68 | £5.36 |
| 20 - 48 | £2.36 | £4.72 |
| 50 - 98 | £2.22 | £4.44 |
| 100 - 198 | £2.065 | £4.13 |
| 200 + | £1.47 | £2.94 |
*price indicative
- RS Stock No.:
- 257-9296
- Mfr. Part No.:
- IRF6644TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
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