Vishay Dual N-Channel MOSFET, 6.5 A, 60 V, 8-Pin SOIC SI4946BEY-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

17 nC @ 10 V

Length

5mm

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm